Toshiba Memory introduces XL-FLASH, a storage-grade memory solution

Toshiba Memory Europe TME today announced the launch of a new Storage Class Memory SCM solution, XL-FLASH™. Based on Toshiba Europe Europe GmbH TEE proprietary breakthrough TME technology, 3D BiCS FLASH™ 1-Bit Per Cell SLC flash, both offering the low latency and high performance required in data centers and enterprise data warehouses.


XL-FLASH solution, which is a storage-class memory, or non-volatile memory, is capable of storing content similar to NAND flash memory and bridging the performance gap between DRAM and NAND memory types. Energy-dependent memory, including DRAM, provides the necessary data access speeds to run demanding applications, but such performance is associated with high costs. When the cost per bit DRAM becomes too high and the scalability fails, the SCM tier in the storage hierarchy solves this problem by providing a cost-effective solution in the form of high-density, non-volatile NAND flash memory. Analyst firm IDC predicts the SCM device market will expand to more than $3 billion in 2022[1].

In the gap between DRAM and NAND flash, XL-FLASH offers higher speed, lower latency, and higher storage capacity at lower cost than traditional DRAM. XL-FLASH will initially be available in SSD format, but may later be implemented in devices connected to the memory channel on a DRAM bus, such as non-volatile double-row memory modules NVDIMM , which should become an industry standard in the future.

Key features:

– 128 gigabit GB crystal module of 2, 4 or 8 crystals

– 4K page size for operating system read and write efficiency

– 16-section architecture for more efficient parallel operation

– Low page read and program times: XL-FLASH memory has a low read latency of less than 5 microseconds, about 10 times faster than existing TLC memory.

As the creator of NAND flash, the first company to introduce 3D flash technology and the leader in process switching, Toshiba Memory is best positioned to launch SCM devices based on SLC memory with its mature manufacturing infrastructure, proven scalability and proven reliability of its SLC memory.

“XL-FLASH is the highest-performance NAND solution available today thanks to our BiCS FLASH flash memory operating in SLC mode,” said Axel Stoermann, vice president of Toshiba Memory Europe. – With only one bit per cell, it has dramatically improved performance. And because XL-FLASH memory is based on proven technologies that are already in mass production, by using XL-FLASH as a Storage Class Memory solution, our customers will be able to reduce time to market.”.

Deliveries of evaluation samples will begin in September 2019., The new KIO logo will be the first of its kind in Europe and is scheduled to go into mass production in 2020.

Rate this article
( No ratings yet )
Add Comments

;-) :| :x :twisted: :smile: :shock: :sad: :roll: :razz: :oops: :o :mrgreen: :lol: :idea: :grin: :evil: :cry: :cool: :arrow: :???: :?: :!: